Chemical identification of single atoms in heterogeneous III-IV chains on Si(100) surface by means of nc-AFM and DFT calculations.
Identifieur interne : 000F49 ( Main/Exploration ); précédent : 000F48; suivant : 000F50Chemical identification of single atoms in heterogeneous III-IV chains on Si(100) surface by means of nc-AFM and DFT calculations.
Auteurs : RBID : pubmed:22747258English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Silicon, Tin.
- methods : Materials Testing, Microscopy, Atomic Force.
- Computer Simulation, Models, Chemical.
Abstract
Chemical identification of individual atoms in mixed In-Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished.
DOI: 10.1021/nn301996k
PubMed: 22747258
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Chemical identification of single atoms in heterogeneous III-IV chains on Si(100) surface by means of nc-AFM and DFT calculations.</title><author><name sortKey="Setv N, Martin" uniqKey="Setv N M">Martin Setvín</name><affiliation wicri:level="1"><nlm:affiliation>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00, Prague, Czech Republic. setvin@fzu.cz</nlm:affiliation><country xml:lang="fr">République tchèque</country><wicri:regionArea>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00, Prague</wicri:regionArea></affiliation></author><author><name sortKey="Mutombo, Pingo" uniqKey="Mutombo P">Pingo Mutombo</name></author><author><name sortKey="Ondr Ek, Martin" uniqKey="Ondr Ek M">Martin Ondráček</name></author><author><name sortKey="Majzik, Zsolt" uniqKey="Majzik Z">Zsolt Majzik</name></author><author><name sortKey=" Vec, Martin" uniqKey=" Vec M">Martin Švec</name></author><author><name sortKey="Ch B, Vladim R" uniqKey="Ch B V">Vladimír Cháb</name></author><author><name sortKey="O T Dal, Ivan" uniqKey="O T Dal I">Ivan Ošt'ádal</name></author><author><name sortKey="Sobot K, Pavel" uniqKey="Sobot K P">Pavel Sobotík</name></author><author><name sortKey="Jel Nek, Pavel" uniqKey="Jel Nek P">Pavel Jelínek</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1021/nn301996k</idno><idno type="RBID">pubmed:22747258</idno><idno type="pmid">22747258</idno><idno type="wicri:Area/Main/Corpus">000C17</idno><idno type="wicri:Area/Main/Curation">000C17</idno><idno type="wicri:Area/Main/Exploration">000F49</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computer Simulation</term><term>Indium (chemistry)</term><term>Materials Testing (methods)</term><term>Microscopy, Atomic Force (methods)</term><term>Models, Chemical</term><term>Silicon (chemistry)</term><term>Tin (chemistry)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Silicon</term><term>Tin</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Materials Testing</term><term>Microscopy, Atomic Force</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term><term>Models, Chemical</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Chemical identification of individual atoms in mixed In-Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22747258</PMID><DateCreated><Year>2012</Year><Month>08</Month><Day>28</Day></DateCreated><DateCompleted><Year>2013</Year><Month>01</Month><Day>03</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1936-086X</ISSN><JournalIssue CitedMedium="Internet"><Volume>6</Volume><Issue>8</Issue><PubDate><Year>2012</Year><Month>Aug</Month><Day>28</Day></PubDate></JournalIssue><Title>ACS nano</Title><ISOAbbreviation>ACS Nano</ISOAbbreviation></Journal><ArticleTitle>Chemical identification of single atoms in heterogeneous III-IV chains on Si(100) surface by means of nc-AFM and DFT calculations.</ArticleTitle><Pagination><MedlinePgn>6969-76</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nn301996k</ELocationID><Abstract><AbstractText>Chemical identification of individual atoms in mixed In-Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Setvín</LastName><ForeName>Martin</ForeName><Initials>M</Initials><Affiliation>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00, Prague, Czech Republic. setvin@fzu.cz</Affiliation></Author><Author ValidYN="Y"><LastName>Mutombo</LastName><ForeName>Pingo</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Ondráček</LastName><ForeName>Martin</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Majzik</LastName><ForeName>Zsolt</ForeName><Initials>Z</Initials></Author><Author ValidYN="Y"><LastName>Švec</LastName><ForeName>Martin</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Cháb</LastName><ForeName>Vladimír</ForeName><Initials>V</Initials></Author><Author ValidYN="Y"><LastName>Ošt'ádal</LastName><ForeName>Ivan</ForeName><Initials>I</Initials></Author><Author ValidYN="Y"><LastName>Sobotík</LastName><ForeName>Pavel</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Jelínek</LastName><ForeName>Pavel</ForeName><Initials>P</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>07</Month><Day>17</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Nano</MedlineTA><NlmUniqueID>101313589</NlmUniqueID><ISSNLinking>1936-0851</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>7440-31-5</RegistryNumber><NameOfSubstance>Tin</NameOfSubstance></Chemical><Chemical><RegistryNumber>Z4152N8IUI</RegistryNumber><NameOfSubstance>Silicon</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Computer Simulation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Microscopy, Atomic Force</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Models, Chemical</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Silicon</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Tin</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>7</Month><Day>17</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>7</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>7</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>1</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nn301996k</ArticleId><ArticleId IdType="pubmed">22747258</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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